Summary
Process maturity: Stable
The device is formingless and has low voltage operation. Similar behaviour can be found with devices made with thinner ZnO layer (>30 nm); however, the On/Off ratio is smaller. Thinner devices exhibit volatile characteristics. Nevertheless, the device yield needs to be improved.
Active layer fabrication Data
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Fabrication method: |
Magnetron sputtering |
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Tool(s) used: |
Angstrom |
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Main fabrication params: |
Ar:O₂ (2/1) ratio and flows (30 sccm); temperature (assumed RT if not specified); power (30 W); pressure (10 mTorr). |
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Recipe |
Ar:O₂ |
Temp |
Comments |
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ZnO_7_10mT_50 |
20:10 |
25°C |
Thickness 50 nm. |
Electrode configuration
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Top |
Bottom |
Tool |
Comments |
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Ag (50 nm) |
Pt/Ti (25/50 nm) |
LAB |
Standard recipe. Pristine Ohmic. |
Indicative data
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Measurement: Pristine devices; I-V characteristic (forming less); Reset voltage -0.5; Compliance 1mA. Device stack: Ag/ZnO/Pt 50/50/25 (in nm, top to bottom); SA60. Active layer recipe: ZnO_7_10mT_50 Comment: Device yield <70%, stable DC endurance (ratio ~5). |
